METHOD OF FABRICATING SEMICONDUCTOR DEVICE

    公开(公告)号:US20230075390A1

    公开(公告)日:2023-03-09

    申请号:US17726673

    申请日:2022-04-22

    Inventor: Yangsoo SON

    Abstract: A method of fabricating a semiconductor device includes forming a cut-off region in at least one mandrel line among a plurality of mandrel lines, conformally forming a spacer material layer in the plurality of mandrel lines and a non-mandrel area and forming a cut spacer in the cut-off region and depositing a gap-fill material such that a cut block is formed on a portion of the non-mandrel area and a concave portion of the cut spacer is filled.

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