公开(公告)号：US20240183796A1

公开(公告)日：2024-06-06

申请号：US18385480

申请日：2023-10-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YASUHIRO HIDAKA ,  INGI KIM

IPC: G01N21/95 ,  G01N21/88 ,  G02F1/35 ,  G02F1/355 ,  G02F1/37 ,  H01L21/66

CPC classification number: G01N21/9505 ,  G01N21/8806 ,  G02F1/3546 ,  G02F1/3551 ,  G02F1/37 ,  H01L22/12 ,  G01N2021/8848

Abstract: In semiconductor inspection using second-harmonic generation within an object, a weak second-harmonic is detected at high sensitivity. In a semiconductor inspecting apparatus which irradiates a pulsed laser with a very short pulse width to a surface of a semiconductor device as the object, and measures the second-harmonic generated within the semiconductor device, a second-harmonic generation element is disposed between a light source and the object to generate a first second-harmonic. Further, the apparatus modulates a phase of only the first second-harmonic using an electric optical crystal, and then, a fundamental wave is irradiated onto the object. When the fundamental wave is irradiated onto the semiconductor device, the second-harmonic is generated therefrom. The first second-harmonic interferes with the second second-harmonic on a detector, and an intensity of the light obtained by the interfering is modulated at the same period as that of the phase modulation of the first second-harmonic. An amplitude of the second second-harmonic may be obtained from a modulated amplitude thereof, and a phase of the second second-harmonic may be measured from a modulated phase thereof.