公开(公告)号：US11362623B2

公开(公告)日：2022-06-14

申请号：US17082159

申请日：2020-10-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Toshihiko Yoshimasu ,  Kouki Tanji ,  Tsuyoshi Sugiura

IPC: H03B5/12 ,  H04B1/3827 ,  H04B1/40 ,  H04B1/16 ,  H04B1/04

Abstract: A voltage-controlled oscillator includes a first transistor, a second transistor, an inductive impedance element, a first variable capacitive impedance element, and a second variable capacitive impedance element. The first transistor has a source coupled to a first power source, a drain coupled to a first node, and a gate coupled to a second node. The second transistor has a source coupled to the first power source, a drain coupled to the second node, and a gate coupled to the first node. The inductive impedance element has a first terminal coupled to the first node and a second terminal coupled to the second node. The first variable capacitive impedance element has a first terminal coupled to the first node and a second terminal coupled to a third node. The second variable capacitive impedance element has a first terminal coupled to the second node and a second terminal coupled to the third node.

公开(公告)号：US20210167727A1

公开(公告)日：2021-06-03

申请号：US17082159

申请日：2020-10-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Toshihiko Yoshimasu ,  Kouki Tanji ,  Tsuyoshi Sugiura

IPC: H03B5/12 ,  H04B1/3827 ,  H04B1/40

Abstract: A voltage-controlled oscillator includes a first transistor, a second transistor, an inductive impedance element, a first variable capacitive impedance element, and a second variable capacitive impedance element. The first transistor has a source coupled to a first power source, a drain coupled to a first node, and a gate coupled to a second node. The second transistor has a source coupled to the first power source, a drain coupled to the second node, and a gate coupled to the first node. The inductive impedance element has a first terminal coupled to the first node and a second terminal coupled to the second node. The first variable capacitive impedance element has a first terminal coupled to the first node and a second terminal coupled to a third node. The second variable capacitive impedance element has a first terminal coupled to the second node and a second terminal coupled to the third node.

公开(公告)号：US11043919B2

公开(公告)日：2021-06-22

申请号：US16522866

申请日：2019-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Toshihiko Yoshimasu ,  Tadamasa Murakami ,  Tsuyoshi Sugiura

IPC: H03F1/02 ,  H03F3/19 ,  H03F3/21 ,  G05F1/565

Abstract: A power amplifier includes a first bias circuit including a first and third transistor, a first sub-bias circuit, and an amplifying circuit including a fourth transistor. In the first bias circuit, a second terminal of the first transistor and a second terminal of the first sub-bias circuit are grounded, a control terminal of the first transistor is connected to a control terminal of the first sub-bias circuit, a first terminal of the first sub-bias circuit is connected to a constant voltage terminal, a first terminal of the first transistor is connected to a second terminal of the third transistor, a first terminal of the third transistor is connected to a control terminal of the third transistor. The amplifying circuit amplifies an input signal power based on a first bias signal from the first bias circuit to a control terminal of the fourth transistor.

公开(公告)号：US20200036340A1

公开(公告)日：2020-01-30

申请号：US16522866

申请日：2019-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Toshihiko Yoshimasu ,  Tadamasa Murakami ,  Tsuyoshi Sugiura

IPC: H03F1/02 ,  H03F3/19 ,  H03F3/21 ,  G05F1/565

Abstract: A power amplifier includes a first bias circuit including a first and third transistor, a first sub-bias circuit, and an amplifying circuit including a fourth transistor. In the first bias circuit, a second terminal of the first transistor and a second terminal of the first sub-bias circuit are grounded, a control terminal of the first transistor is connected to a control terminal of the first sub-bias circuit, a first terminal of the first sub-bias circuit is connected to a constant voltage terminal, a first terminal of the first transistor is connected to a second terminal of the third transistor, a first terminal of the third transistor is connected to a control terminal of the third transistor. The amplifying circuit amplifies an input signal power based on a first bias signal from the first bias circuit to a control terminal of the fourth transistor.