公开(公告)号：US20240292129A1

公开(公告)日：2024-08-29

申请号：US18399145

申请日：2023-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeokjong LEE ,  Yunjung KIM ,  Sungwook JUN ,  Yeongseok CHOI ,  Minho KWON ,  Mooyoung KIM ,  Yunhong KIM

IPC: H04N25/772 ,  H04N25/60 ,  H04N25/709 ,  H04N25/76 ,  H04N25/79

CPC classification number: H04N25/772 ,  H04N25/60 ,  H04N25/709 ,  H04N25/7795 ,  H04N25/79

Abstract: An image sensor includes a first chip including a pixel array including a plurality of pixels, and a second chip including a peripheral circuit configured to drive the pixel array and process a pixel signal output from the pixel array, where the first chip and the second chip are stacked, the peripheral circuit is implemented with a plurality of field effect transistors (FETs), and at least one channel structure of each of the plurality of FETs all extend in a same direction.