公开(公告)号：US09891855B2

公开(公告)日：2018-02-13

申请号：US15438651

申请日：2017-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hui-Kap Yang ,  Myung-Kyoon Yim ,  Soo-Hwan Kim

IPC: G06F12/00 ,  G06F3/06

CPC classification number: G06F3/0634 ,  G06F1/324 ,  G06F1/3275 ,  G06F1/3296 ,  G06F3/0614 ,  G06F3/0673 ,  G11C11/4074

Abstract: A memory device is provided which is capable of adjusting an operation voltage, and an application processor is provided for controlling the memory device. The memory device may include: a receiving terminal for receiving a voltage control signal from an external source, the voltage control signal being for adjusting an operation voltage level according to an operation speed of the memory device; and a voltage adjustment unit for adjusting a level of an operation voltage of the memory device in response to the voltage control signal. The level of the operation voltage is adjusted before a memory operation is performed at the operation speed corresponding to the adjusted operation voltage.