公开(公告)号：US10332780B2

公开(公告)日：2019-06-25

申请号：US15828728

申请日：2017-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunki Min ,  Songe Kim ,  Koungmin Ryu ,  Je-Min Yoo

IPC: H01L29/78 ,  H01L21/762 ,  H01L27/092 ,  H01L29/423 ,  H01L29/786 ,  H01L21/8238 ,  H01L29/06

Abstract: A semiconductor device includes a substrate having a first active pattern and a second active pattern, the first active pattern including a first recess region dividing an upper portion thereof into a first portion and a second portion, the second active pattern including a second recess region dividing an upper portion thereof into a first portion and a second portion, a first insulating pattern covering an inner sidewall of the first recess region, and a second insulating pattern covering an inner sidewall of the second recess region. The first insulating pattern and the second insulating pattern include the same insulating material, and a volume fraction of the first insulating pattern with respect to a volume of the first recess region is smaller than a volume fraction of the second insulating pattern with respect to a volume of the second recess region.