-
1.
公开(公告)号:US20240330175A1
公开(公告)日:2024-10-03
申请号:US18744188
申请日:2024-06-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyung-Kyun BYUN , Byung June SONG , Song Ho YOON
IPC: G06F12/02 , G06F3/06 , G06F12/1009 , G06F16/28
CPC classification number: G06F12/0253 , G06F3/0608 , G06F3/0652 , G06F3/0659 , G06F3/0679 , G06F12/1009 , G06F16/285 , G06F2212/1044 , G06F2212/657
Abstract: A storage device includes: a buffer to receive first data and second data from outside, and store the first data and the second data on a first page; a non-volatile memory to store the first data and the second data in a first block; and a controller to perform a program operation that programs the first and second data in free blocks different from each other through a garbage collection. The first data may include a first stream class number identifying characteristics of the first data, and the second data may include a second stream class number identifying characteristics of the second data and is different from the first stream class number. The controller may transmit information of the program operation to the outside before performing the program operation. The controller may perform the program operation when receiving a program execution permission command from the outside.
-
公开(公告)号:US20220066872A1
公开(公告)日:2022-03-03
申请号:US17352861
申请日:2021-06-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jea-Young KWON , Young-Jin PARK , Jae-Kun LEE , Song Ho YOON , Sil Wan CHANG
Abstract: A storage device is provided. The storage device includes a memory device including a memory cell array configured to store metadata and main data and a storage controller configured to access the memory device and control the memory device, wherein the storage controller is configured to read data from the memory device at a speed adaptively varying to a first read speed or a second read speed according to a state of the memory device, the second read speed being faster than the first read speed.
-
3.
公开(公告)号:US20230273878A1
公开(公告)日:2023-08-31
申请号:US18144335
申请日:2023-05-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyung-Kyun BYUN , Byung June SONG , Song Ho YOON
IPC: G06F12/02 , G06F16/28 , G06F3/06 , G06F12/1009
CPC classification number: G06F12/0253 , G06F3/0608 , G06F3/0652 , G06F3/0659 , G06F3/0679 , G06F12/1009 , G06F16/285 , G06F2212/1044 , G06F2212/657
Abstract: A storage device includes: a buffer to receive first data and second data from outside, and store the first data and the second data on a first page; a non-volatile memory to store the first data and the second data in a first block; and a controller to perform a program operation that programs the first and second data in free blocks different from each other through a garbage collection. The first data may include a first stream class number identifying characteristics of the first data, and the second data may include a second stream class number identifying characteristics of the second data and is different from the first stream class number. The controller may transmit information of the program operation to the outside before performing the program operation. The controller may perform the program operation when receiving a program execution permission command from the outside.
-
公开(公告)号:US20220206893A1
公开(公告)日:2022-06-30
申请号:US17466392
申请日:2021-09-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jae-Kun LEE , Jea-Young KWON , Hwan KIM , Song Ho YOON , Sil Wan CHANG
Abstract: A storage system may include a memory device including a first region including a single-level cell and a second region different from the first region, and a storage controller configured to read data from the first region at a first gear level of a plurality of gear levels, determine an error level of the read data and a state of the memory device, and change the first gear level to a second gear level of the plurality of gear levels based on the determined error level of the data and the determined state of the memory device.
-
公开(公告)号:US20220164123A1
公开(公告)日:2022-05-26
申请号:US17377901
申请日:2021-07-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hwan KIM , Jea-Young KWON , Jae-Kun LEE , Song Ho YOON , Sil Wan CHANG
Abstract: A storage device may include, at least one memory device including at least a first single-level cell (SLC) region, a second SLC region, and at least one multi-level cell (MLC) region, the first SLC region having a higher data read speed than the second SLC region, and the second SLC region having a higher data read speed than the at least one MLC region, and a storage controller configured to control the migration of data among the first SLC region, the second SLC region, and the at least one MLC region.
-
6.
公开(公告)号:US20210397550A1
公开(公告)日:2021-12-23
申请号:US17185001
申请日:2021-02-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyung-Kyun BYUN , Byung June SONG , Song Ho YOON
IPC: G06F12/02 , G06F16/28 , G06F3/06 , G06F12/1009
Abstract: A storage device includes: a buffer to receive first data and second data from outside, and store the first data and the second data on a first page; a non-volatile memory to store the first data and the second data in a first block; and a controller to perform a program operation that programs the first and second data in free blocks different from each other through a garbage collection. The first data may include a first stream class number identifying characteristics of the first data, and the second data may include a second stream class number identifying characteristics of the second data and is different from the first stream class number. The controller may transmit information of the program operation to the outside before performing the program operation. The controller may perform the program operation when receiving a program execution permission command from the outside.
-
-
-
-
-