公开(公告)号：US20190006385A1

公开(公告)日：2019-01-03

申请号：US15987545

申请日：2018-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Gil KIM ,  Seul-Ye KIM ,  Hong-suk KIM ,  Phil-Ouk NAM ,  Jae-Young AHN ,  Ji-Hoon CHOI

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L21/311 ,  H01L21/768

CPC classification number: H01L27/11582 ,  H01L21/31111 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76877 ,  H01L27/11556 ,  H01L27/11575

Abstract: A semiconductor device may include a plurality of conductive patterns and an insulation pattern. The plurality of conductive patterns may be formed on a substrate. The plurality of conductive patterns may be spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate. Each of the plurality of conductive patterns may have an extension portion and a step portion. The step portion may be disposed at an edge of the corresponding conductive pattern. The insulation pattern may be formed between the plurality of conductive patterns in the vertical direction. A lower surface and an upper surface of the step portion of each of the plurality of conductive patterns may be bent upwardly.