公开(公告)号：US20190051728A1

公开(公告)日：2019-02-14

申请号：US16156062

申请日：2018-10-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Han LEE ,  Myung Il KANG ,  Jae Hwan LEE ,  Sun Wook KIM ,  Seong Ju KIM ,  Sung Jin PARK ,  Hong Seon YANG ,  Joo Hee JUNG

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/66 ,  H01L29/49

Abstract: A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first gate electrode intersecting the first fin; a first trench formed within the first fin at a side of the first gate electrode; a first epitaxial layer filling a portion of the first trench, wherein a thickness of the first epitaxial layer becomes thinner closer to a sidewall of the first trench; and a second epitaxial layer filling the first trench on the first epitaxial layer, wherein a boron concentration of the second epitaxial layer is greater than a boron concentration of the first epitaxial layer.

公开(公告)号：US20180130890A1

公开(公告)日：2018-05-10

申请号：US15596152

申请日：2017-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Han LEE ,  Myung Il KANG ,  Jae Hwan LEE ,  Sun Wook KIM ,  Seong Ju KIM ,  Sung Jin PARK ,  Hong Seon YANG ,  Joo Hee JUNG

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/4236 ,  H01L29/4966 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7855

Abstract: A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first gate electrode intersecting the first fin; a first trench formed within the first fin at a side of the first gate electrode; a first epitaxial layer filling a portion of the first trench, wherein a thickness of the first epitaxial layer becomes thinner closer to a sidewall of the first trench; and a second epitaxial layer filling the first trench on the first epitaxial layer, wherein a boron concentration of the second epitaxial layer is greater than a boron concentration of the first epitaxial layer.