公开(公告)号：US20220085023A1

公开(公告)日：2022-03-17

申请号：US17471778

申请日：2021-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seokho SHIN ,  Taegyu KANG ,  Byeungmoo KANG ,  Joongchan SHIN

IPC: H01L27/108

Abstract: A semiconductor memory device including a substrate; a semiconductor pattern extending in a first horizontal direction on the substrate; bit lines extending in a second horizontal direction on the substrate perpendicular to the first horizontal direction, the bit lines being at a first end of the semiconductor pattern; word lines extending in a vertical direction on the substrate at a side of the semiconductor pattern; a capacitor structure on a second end of the semiconductor pattern opposite to the first end in the first horizontal direction, the capacitor structure including a lower electrode connected to the semiconductor pattern, an upper electrode spaced apart from the lower electrode, and a capacitor dielectric layer between the lower electrode and the upper electrode; and a capacitor contact layer between the second end of the semiconductor pattern and the lower electrode and including a pair of convex surfaces in contact with the semiconductor pattern.

公开(公告)号：US20240098984A1

公开(公告)日：2024-03-21

申请号：US18368243

申请日：2023-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungeun CHOI ,  Seokho SHIN ,  Joongchan SHIN ,  Kiseok LEE ,  Keunnam KIM ,  Seokhan PARK ,  Eunsuk JANG ,  Jinwoo HAN

IPC: H10B12/00 ,  H01L29/78

CPC classification number: H10B12/482 ,  H01L29/7827 ,  H10B12/315 ,  H10B12/488

Abstract: A semiconductor device may include a substrate, a bitline extending in a first direction on the substrate, and an active pattern on the bitline. The semiconductor device may include a back gate electrode extending beside one side of the active pattern in a second direction perpendicular to the first direction across the bitline, and a wordline extending in the second direction beside the other side of the active pattern. A length of the active pattern in the second direction may be greater than a length of the bitline in the second direction.

公开(公告)号：US20230276614A1

公开(公告)日：2023-08-31

申请号：US18144958

申请日：2023-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seokho SHIN ,  Taegyu KANG ,  Byeungmoo KANG ,  Joongchan SHIN

IPC: H10B12/00

CPC classification number: H10B12/30 ,  H10B12/03 ,  H10B12/05

Abstract: A semiconductor memory device including a substrate; a semiconductor pattern extending in a first horizontal direction on the substrate; bit lines extending in a second horizontal direction on the substrate perpendicular to the first horizontal direction, the bit lines being at a first end of the semiconductor pattern; word lines extending in a vertical direction on the substrate at a side of the semiconductor pattern; a capacitor structure on a second end of the semiconductor pattern opposite to the first end in the first horizontal direction, the capacitor structure including a lower electrode connected to the semiconductor pattern, an upper electrode spaced apart from the lower electrode, and a capacitor dielectric layer between the lower electrode and the upper electrode; and a capacitor contact layer between the second end of the semiconductor pattern and the lower electrode and including a pair of convex surfaces in contact with the semiconductor pattern.