公开(公告)号：US20220037502A1

公开(公告)日：2022-02-03

申请号：US17451691

申请日：2021-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： NAKJIN SON ,  SEUNGJOON LEE ,  BONG SEOB YANG ,  DOYOUNG CHOI

IPC: H01L29/49 ,  H01L29/786 ,  H01L21/02 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66

Abstract: A semiconductor device include a substrate including a peripheral region, a first active pattern provided on the peripheral region of the substrate, the first active pattern having an upper portion including first semiconductor patterns and second semiconductor patterns which are alternately stacked, a first gate electrode intersecting the first active pattern, a pair of first source/drain patterns provided at both sides of the first gate electrode, respectively, and a first gate insulating layer disposed between the first gate electrode and the first active pattern. The first gate insulating layer includes a first insulating layer formed on the first active pattern, a second insulating layer formed on the first insulating layer, and a high-k dielectric layer formed on the second insulating layer. The first gate insulating layer contains a first dipole element including lanthanum (La), aluminum (Al), or a combination thereof.

公开(公告)号：US20250081639A1

公开(公告)日：2025-03-06

申请号：US18950847

申请日：2024-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNGJOON LEE ,  JUNG BIN YUN ,  KYUNGHO LEE ,  JIHUN KIM ,  JUNGHYUNG PYO

IPC: H01L27/146

Abstract: Disclosed is an image sensor comprising a semiconductor substrate that includes first through fourth pixel regions, each including first through fourth photoelectric conversion sections, and a pixel separation structure disposed in the semiconductor substrate and separating the first through fourth pixel regions from each other. The second pixel region is spaced apart in a first direction from the first pixel region. The fourth pixel region is spaced apart in a second direction from the first pixel region. The second direction intersects the first direction. The semiconductor substrate includes first impurity sections disposed on corresponding central portions of the first through fourth pixel regions, and a second impurity section disposed between the second and fourth pixel regions. Impurities doped in the first impurity sections have a conductivity type different from that of impurities doped in the second impurity section.

公开(公告)号：US20220216250A1

公开(公告)日：2022-07-07

申请号：US17491705

申请日：2021-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNGJOON LEE ,  JUNG BIN YUN ,  KYUNGHO LEE ,  JIHUN KIM ,  JUNGHYUNG PYO

IPC: H01L27/146

Abstract: Disclosed is an image sensor comprising a semiconductor substrate that includes first through fourth pixel regions, each including first through fourth photoelectric conversion sections, and a pixel separation structure disposed in the semiconductor substrate and separating the first through fourth pixel regions from each other. The second pixel region is spaced apart in a first direction from the first pixel region. The fourth pixel region is spaced apart in a second direction from the first pixel region. The second direction intersects the first direction. The semiconductor substrate includes first impurity sections disposed on corresponding central portions of the first through fourth pixel regions, and a second impurity section disposed between the second and fourth pixel regions. Impurities doped in the first impurity sections have a conductivity type different from that of impurities doped in the second impurity section.

公开(公告)号：US20220109012A1

公开(公告)日：2022-04-07

申请号：US17345284

申请日：2021-06-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANGHYUCK MOON ,  KYUNGHO LEE ,  SEUNGJOON LEE ,  MINJI JUNG ,  MASATO FUJITA

IPC: H01L27/146

Abstract: An image sensor includes a substrate having a sensing area, a floating diffusion region arranged in the sensing area, a plurality of photodiodes arranged around the floating diffusion region in the sensing area, and an inter-pixel overflow (IPO) barrier in contact with each of the plurality of photodiodes, the IPO barrier overlapping the floating diffusion region in a vertical direction at a position vertically spaced apart from the floating diffusion region within the sensing area.