公开(公告)号：US20240228166A1

公开(公告)日：2024-07-11

申请号：US18227111

申请日：2023-07-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUNGON OH ,  CHUNGHYUK YOU ,  JIHUN KIM ,  SANGHYUK PARK

IPC: B65G1/127

CPC classification number: B65G1/127

Abstract: A storage apparatus includes a support part fixedly coupled to a ceiling surface, a rotating plate under the support part, a driving unit connecting the support part and the rotating plate, and a plurality of tables spaced apart from each other. The plurality of tables has an axis. The plurality of tables is connected to the rotating plate. The rotating plate is rotatable about a rotation axis parallel to the axis.

公开(公告)号：US20250081639A1

公开(公告)日：2025-03-06

申请号：US18950847

申请日：2024-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNGJOON LEE ,  JUNG BIN YUN ,  KYUNGHO LEE ,  JIHUN KIM ,  JUNGHYUNG PYO

IPC: H01L27/146

Abstract: Disclosed is an image sensor comprising a semiconductor substrate that includes first through fourth pixel regions, each including first through fourth photoelectric conversion sections, and a pixel separation structure disposed in the semiconductor substrate and separating the first through fourth pixel regions from each other. The second pixel region is spaced apart in a first direction from the first pixel region. The fourth pixel region is spaced apart in a second direction from the first pixel region. The second direction intersects the first direction. The semiconductor substrate includes first impurity sections disposed on corresponding central portions of the first through fourth pixel regions, and a second impurity section disposed between the second and fourth pixel regions. Impurities doped in the first impurity sections have a conductivity type different from that of impurities doped in the second impurity section.

公开(公告)号：US20220216250A1

公开(公告)日：2022-07-07

申请号：US17491705

申请日：2021-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNGJOON LEE ,  JUNG BIN YUN ,  KYUNGHO LEE ,  JIHUN KIM ,  JUNGHYUNG PYO

IPC: H01L27/146

Abstract: Disclosed is an image sensor comprising a semiconductor substrate that includes first through fourth pixel regions, each including first through fourth photoelectric conversion sections, and a pixel separation structure disposed in the semiconductor substrate and separating the first through fourth pixel regions from each other. The second pixel region is spaced apart in a first direction from the first pixel region. The fourth pixel region is spaced apart in a second direction from the first pixel region. The second direction intersects the first direction. The semiconductor substrate includes first impurity sections disposed on corresponding central portions of the first through fourth pixel regions, and a second impurity section disposed between the second and fourth pixel regions. Impurities doped in the first impurity sections have a conductivity type different from that of impurities doped in the second impurity section.