公开(公告)号：US20180083531A1

公开(公告)日：2018-03-22

申请号：US15448887

申请日：2017-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HUY HIEU NGUYEN ,  SANG-HO KIM ,  DAE-YONG KIM

IPC: H02M3/07

CPC classification number: H02M3/07 ,  H02M2001/0025

Abstract: A reconfigurable bipolar output charge pump circuit includes an input terminal configured to receive an input voltage. First and second terminals are connected to a first flying capacitor, and third and fourth terminals are connected to a second flying capacitor. First and second output terminals are respectively connected to first and second output capacitors and configured to respectively provide a positive output voltage and a negative output voltage. A switch network includes switches configured to connect the input terminal, the first to fourth terminals, and the first and second output terminals to each other in response to switch control signals. The switch network is configured to provide one of multiple potential charge pump modes. A controller generates the switch control signals in response to a mode control signal indicating one of the charge pump modes so that a magnitude of the positive output voltage and the negative output voltage becomes one of multiple predefined voltage levels.

公开(公告)号：US20190155323A1

公开(公告)日：2019-05-23

申请号：US16186753

申请日：2018-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JOO-SEONG KIM ,  KWANG-HO KIM ,  SANG-HO KIM

IPC: G05F3/26 ,  H03F3/45 ,  G01K7/01

Abstract: A reference voltage generating circuit includes: an operational amplifier including a first input terminal connected to a first node and a second input terminal connected to a second node; a first transistor connected between a ground terminal and the first node, wherein a first current flows in the first transistor; a second transistor connected to the ground terminal; and a first variable resistor connected between the second transistor and the second node, wherein the first variable resistor has a first resistance value for adjusting the first current, based on a change in a current characteristic of the first transistor caused by a variation in a process of forming the first transistor. The reference voltage generating circuit provides a reference voltage, based on a voltage of the first node and a voltage across the first variable resistor.