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1.发明申请公开(公告)号：US20170023966A1
公开(公告)日：2017-01-26
申请号：US15166392
申请日：2016-05-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： JOO-SEONG KIM , Sang-Ho Kim , Kwang-Ho Kim
CPC classification number: G05F3/245 , G01K7/01 , G01K15/005 , G01R31/2851 , G05F3/262
Abstract: A semiconductor device includes: an integrated circuit (IC) including an internal circuit; and a mismatch detection and correction circuit connected to the internal circuit of the IC, the mismatch detection and correction circuit configured to detect a process mismatch and correct an error in the internal circuit caused by the process mismatch using a current difference between a first current and a second current based on a charged voltage of a capacitor.
Abstract translation: 一种半导体器件包括：包括内部电路的集成电路（IC）; 以及连接到IC的内部电路的失配检测和校正电路，所述失配检测和校正电路被配置为检测过程失配并且使用第一电流和第一电流之间的电流差校正由所述过程失配引起的内部电路中的误差 基于电容器的充电电压的第二电流。
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2.发明申请公开(公告)号：US20190155323A1
公开(公告)日：2019-05-23
申请号：US16186753
申请日：2018-11-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： JOO-SEONG KIM , KWANG-HO KIM , SANG-HO KIM
Abstract: A reference voltage generating circuit includes: an operational amplifier including a first input terminal connected to a first node and a second input terminal connected to a second node; a first transistor connected between a ground terminal and the first node, wherein a first current flows in the first transistor; a second transistor connected to the ground terminal; and a first variable resistor connected between the second transistor and the second node, wherein the first variable resistor has a first resistance value for adjusting the first current, based on a change in a current characteristic of the first transistor caused by a variation in a process of forming the first transistor. The reference voltage generating circuit provides a reference voltage, based on a voltage of the first node and a voltage across the first variable resistor.
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