公开(公告)号：US20230378264A1

公开(公告)日：2023-11-23

申请号：US18091603

申请日：2022-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Min SONG ,  Nam Hyun LEE

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L29/0673 ,  H01L29/78696 ,  H01L29/42392

Abstract: A semiconductor device includes a substrate extending a first direction and a second direction perpendicular to the first direction, an active pattern that protrudes from the substrate in a third direction perpendicular to the first direction and the second direction, a first plurality of lower nanosheets, a second plurality of lower nanosheets stacked spaced apart from the first plurality of lower nanosheets in the first direction, a first plurality of upper nanosheets spaced apart from the first plurality of lower nanosheets in the third direction, and a second plurality of upper nanosheets spaced apart from the second plurality of lower nanosheets in the third direction. A first upper gate electrode surrounding the first plurality of upper nanosheets. A second upper gate electrode surrounding the second plurality of upper nanosheets. A width of the first plurality of upper nanosheets is different from a width of the second plurality of upper nanosheets.

公开(公告)号：US20220140075A1

公开(公告)日：2022-05-05

申请号：US17575918

申请日：2022-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Cheol SHIN ,  Sun Wook KIM ,  Seung Min SONG ,  Nam Hyun LEE

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L27/092

Abstract: A semiconductor device includes a substrate having a first region and a second region, first and second nanowires disposed sequentially on the substrate in the first region, and extending respectively in a first direction, third and fourth nanowires disposed sequentially on the substrate in the second region, and extending respectively in the first direction, a first inner spacer between the first nanowire and the second nanowire, and including hydrogen of a first hydrogen mole fraction, and a second inner spacer between the third nanowire and the fourth nanowire, and including hydrogen of a second hydrogen mole fraction that is greater than the first hydrogen mole fraction.

公开(公告)号：US20210036106A1

公开(公告)日：2021-02-04

申请号：US16776677

申请日：2020-01-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Cheol SHIN ,  Sun Wook KIM ,  Seung Min SONG ,  Nam Hyun LEE

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/10 ,  H01L27/092

Abstract: A semiconductor device includes a substrate having a first region and a second region, first and second nanowires disposed sequentially on the substrate in the first region, and extending respectively in a first direction, third and fourth nanowires disposed sequentially on the substrate in the second region, and extending respectively in the first direction, a first inner spacer between the first nanowire and the second nanowire, and including hydrogen of a first hydrogen mole fraction, and a second inner spacer between the third nanowire and the fourth nanowire, and including hydrogen of a second hydrogen mole fraction that is greater than the first hydrogen mole fraction.