Patent search ap:("SAMSUNG ELECTRONICS CO. Page LTD.") AND inv:"Min-su Lee"

1.

发明授权
Memory device with memory cell blocks, bit line sense amplifier blocks, and control circuit connected to bit line sense amplifier blocks to control constant levels of currents supplied to sensing driving voltage lines 有权

公开(公告)号：US10658014B2

公开(公告)日：2020-05-19

申请号：US15941877

申请日：2018-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-su Lee , Jong-cheol Kim

IPC: G11C7/08 , G11C11/4094 , G11C11/4091 , G11C7/06 , G11C7/12

Abstract: A memory device includes memory cell blocks, bit line sense amplifier blocks, and a control circuit connected to one or more of the bit line sense amplifier blocks arranged between the memory cell blocks. The control circuit controls levels of currents respectively supplied to a first sensing driving voltage line and a second sensing driving voltage line driving bit line sense-amplifiers, to be constant. A first sensing driving control signal and/or a second sensing driving control signal, output from the sensing-matching control circuit is provided to the bit line sense amplifiers in all of the bit line sense amplifier blocks, so that the bit line sense amplifiers are constantly driven based on the constant levels of currents supplied to the first sensing driving voltage line and the second sensing driving voltage line.

2.

发明申请
MEMORY DEVICE INCLUDING BIT LINE SENSE AMPLIFIER FOR CONSTANTLY CONTROLLING SENSING OPERATION 审中-公开

公开(公告)号：US20190096446A1

公开(公告)日：2019-03-28

申请号：US15941877

申请日：2018-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-su Lee , Jong-cheol Kim

IPC: G11C7/08 , G11C7/06 , G11C7/12

Abstract: A memory device includes memory cell blocks, bit line sense amplifier blocks, and a control circuit connected to one or more of the bit line sense amplifier blocks arranged between the memory cell blocks. The control circuit controls levels of currents respectively supplied to a first sensing driving voltage line and a second sensing driving voltage line driving bit line sense-amplifiers, to be constant. A first sensing driving control signal and/or a second sensing driving control signal, output from the sensing-matching control circuit is provided to the bit line sense amplifiers in all of the bit line sense amplifier blocks, so that the bit line sense amplifiers are constantly driven based on the constant levels of currents supplied to the first sensing driving voltage line and the second sensing driving voltage line.

Patent Agency Ranking