公开(公告)号：US20180286676A1

公开(公告)日：2018-10-04

申请号：US15706842

申请日：2017-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-suk TAK ,  Min-jae Kang ,  Ju-ri Lee

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/34 ,  C23C16/455 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L21/02656 ,  C23C16/345 ,  C23C16/347 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/458 ,  H01L21/28088 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517

Abstract: A method of manufacturing an integrated circuit device and an integrated circuit device prepared according to the method, the method including forming a silicon oxycarbonitride (SiOCN) material layer on an active region of a substrate, the forming the SiOCN material layer including using a precursor that has a bond between a silicon (Si) atom and a carbon (C) atom; etching a portion of the active region to form a recess in the active region; baking a surface of the recess at about 700° C. to about 800° C. under a hydrogen (H2) atmosphere, and exposing the SiOCN material layer to the atmosphere of the baking while performing the baking; and growing a semiconductor layer from the surface of the recess baked under the hydrogen atmosphere.

公开(公告)号：US10176989B2

公开(公告)日：2019-01-08

申请号：US15706842

申请日：2017-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-suk Tak ,  Min-jae Kang ,  Ju-ri Lee

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/34 ,  C23C16/455 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51

Abstract: A method of manufacturing an integrated circuit device and an integrated circuit device prepared according to the method, the method including forming a silicon oxycarbonitride (SiOCN) material layer on an active region of a substrate, the forming the SiOCN material layer including using a precursor that has a bond between a silicon (Si) atom and a carbon (C) atom; etching a portion of the active region to form a recess in the active region; baking a surface of the recess at about 700° C. to about 800° C. under a hydrogen (H2) atmosphere, and exposing the SiOCN material layer to the atmosphere of the baking while performing the baking; and growing a semiconductor layer from the surface of the recess baked under the hydrogen atmosphere.