公开(公告)号：US11610631B2

公开(公告)日：2023-03-21

申请号：US17316463

申请日：2021-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin-Ho Oh ,  Min-Cheol Kwon ,  Sang-Kwon Moon ,  Sang-Won Jung

IPC: G11C16/04 ,  G11C16/10 ,  G11C11/56 ,  G11C16/08 ,  G06F3/06

Abstract: A nonvolatile memory device includes multi-level cells in a memory cell array including a plurality of memory blocks, and each of the memory blocks includes a plurality of pages. A method of operating the nonvolatile memory device includes pre-programming multi-bit data in a pre-program block of the memory blocks, dividing the multi-level cells into a plurality of state groups based on state codes indicating states of the multi-level cells to generate digest data indicating state group codes corresponding to the state groups, and programming the digest data in a digest block of the memory blocks.

公开(公告)号：US11037628B2

公开(公告)日：2021-06-15

申请号：US16543532

申请日：2019-08-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin-Ho Oh ,  Min-Cheol Kwon ,  Sang-Kwon Moon ,  Sang-Won Jung

IPC: G11C16/04 ,  G11C16/10 ,  G11C11/56 ,  G11C16/08 ,  G06F3/06

Abstract: A nonvolatile memory device includes multi-level cells in a memory cell array including a plurality of memory blocks, and each of the memory blocks includes a plurality of pages. A method of operating the nonvolatile memory device includes pre-programming multi-bit data in a pre-program block of the memory blocks, dividing the multi-level cells into a plurality of state groups based on state codes indicating states of the multi-level cells to generate digest data indicating state group codes corresponding to the state groups, and programming the digest data in a digest block of the memory blocks.