公开(公告)号：US20240339540A1

公开(公告)日：2024-10-10

申请号：US18386898

申请日：2023-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beom Jin KIM ,  Guk Hee KIM ,  Young Woo KIM ,  Jun Soo KIM ,  Sang Cheol NA ,  Kyoung Woo LEE ,  Anthony Dongick LEE ,  Min Seung LEE ,  Myeong Gyoon CHAE ,  Seung Seok HA

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/7855 ,  H01L29/0673 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, an active pattern extending in a first horizontal direction on an upper surface of the substrate, a field insulating layer surrounding a sidewall of the active pattern on the upper surface of the substrate, a first gate electrode extending in a second horizontal direction intersecting the first horizontal direction on the active pattern, a source/drain region disposed on at least one side of the first gate electrode on the active pattern, an upper interlayer insulating layer covering the source/drain region on the field insulating layer, a through via penetrating through the substrate, the field insulating layer and the upper interlayer insulating layer in a vertical direction, the through via spaced apart from the source/drain region in the second horizontal direction, a source/drain contact disposed inside the upper interlayer insulating layer on at least one side of the first gate electrode, the source/drain contact connected to the source/drain region, and a connection portion disposed inside the upper interlayer insulating layer, the connection portion connected to each of the through via and the source/drain contact, wherein a width of the connection portion in the first horizontal direction is greater than a width of the source/drain contact in the first horizontal direction.