METHOD OF DESIGNING A LAYOUT OF A PATTERN, METHOD OF FORMING A PATTERN USING THE SAME, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

    公开(公告)号:US20210117604A1

    公开(公告)日:2021-04-22

    申请号:US16856216

    申请日:2020-04-23

    Abstract: A layout of original pattern is rotated in a rotational direction to form a layout of rotation pattern. Vertices and segment points of the layout of rotation pattern are matched with ones of the reference points closest thereto, and the matched reference points are connected to form a layout of first modification pattern. A region of the layout of first modification pattern is enlarged to form a layout of second modification pattern. A layout of reference pattern having the same direction as the layout of rotation pattern is formed. A layout of target pattern is formed based on a region where the layouts of reference pattern and second modification pattern overlap. An optical proximity correction is performed on the layout of target pattern to form a layout of third modification pattern, which is rotated in a reverse rotational direction to form a layout of final pattern.

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