公开(公告)号：US20240222963A1

公开(公告)日：2024-07-04

申请号：US18402453

申请日：2024-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoungil Do ,  Jinwoo Jung ,  Jooyoung Song ,  Mijin Lee ,  Chanhee Jeon

IPC: H02H9/04

CPC classification number: H02H9/045

Abstract: A device including a first clamp circuit connected between a first node and a second node, wherein the first clamp circuit includes: a symmetric bipolar transistor comprising a control terminal, a first current terminal and a second current terminal, wherein the first current terminal and the second current terminal are symmetrical to each other with respect to the control terminal; a first bipolar transistor electrically connected to the symmetric bipolar transistor and to the first node; and a second bipolar transistor electrically connected to the symmetric bipolar transistor and to the second node.

公开(公告)号：US20240421149A1

公开(公告)日：2024-12-19

申请号：US18582871

申请日：2024-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwoo Jung ,  Kyoungil Do ,  Jooyoung Song ,  Chanhee Jeon

IPC: H01L27/02 ,  H01L27/06 ,  H01L29/06 ,  H01L29/74

Abstract: A semiconductor device includes a substrate doped with first conductivity-type impurities, a first well doped with second conductivity-type impurities different from the first conductivity-type impurities, first active regions in the first well, the first active regions being doped with the first conductivity-type impurities and connected to a first pad through a first interconnection, second active regions outside the first well, the second active regions being doped with the second conductivity-type impurities and connected to a second pad through a second interconnection, third active regions around the first active regions in the first well and doped with the second conductivity-type impurities, and fourth active regions around the second active regions outside the first well and doped with the first conductivity-type impurities, wherein at least one of the third active regions and at least one of the fourth active regions are electrically connected to each other through a third interconnection.

公开(公告)号：US20240222362A1

公开(公告)日：2024-07-04

申请号：US18402387

申请日：2024-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoungil Do ,  Jinwoo Jung ,  Jooyoung Song ,  Mijin Lee ,  Chanhee Jeon

IPC: H01L27/02 ,  H02H9/04

CPC classification number: H01L27/0262 ,  H01L27/0255 ,  H01L27/0292 ,  H02H9/046

Abstract: A device, including a first silicon controlled rectifier comprising a first anode connected to a first node, a first cathode connected to a pad, and a first gate; a second silicon controlled rectifier comprising a second anode connected to the pad, a second cathode connected to a second node, and a second gate; and a back diode forwardly connected from the second node to the first gate.