公开(公告)号：US20190287643A1

公开(公告)日：2019-09-19

申请号：US16299348

申请日：2019-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-hoon KIM ,  Jun-jin KONG ,  Hong-rak SON ,  Pil-sang YOON

IPC: G11C29/50 ,  G11C11/56 ,  G11C16/26 ,  G11C16/34 ,  G11C29/02

Abstract: A method of setting a read voltage by a memory controller and a storage device are provided. The method includes controlling a memory device to read data from memory cells by applying a test read voltage to a selected word line; receiving, from the memory device, cell count information corresponding to a read operation of the memory device, and renewing the test read voltage by using the cell count information and a cost function to find an optimum read voltage, the cost function being determined for each read voltage level; and determining a read voltage by performing the controlling of the memory device and the renewing of the test read voltage at least once.