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公开(公告)号:US20250120211A1
公开(公告)日:2025-04-10
申请号:US18767607
申请日:2024-07-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jaesang Yoo , Younguk Song , Minwook Jung , Kiho Jung , Namgi Hong
IPC: H01L27/146
Abstract: An image sensor includes photoelectric conversion devices provided in a substrate comprising first and second surfaces, first and second photoelectric conversion elements in the substrate, first and second separation structures in the substrate, first and second grid structures on the first and second separation structures. The second photoelectric conversion element is disposed between the first separation structure and the second separation structure. The first and second grid structure are vertically overlapping with the first and second separation structure. The first grid structure comprises an air gap and N plurality of layers on an external side surface of the air gap. Each of the N plurality of layers extends in a first direction. The second grid structures comprises M plurality of layers on an external side surface of the second grid structure and extends in the first direction.