公开(公告)号：US10096650B2

公开(公告)日：2018-10-09

申请号：US15824366

申请日：2017-11-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Seok Kim ,  Kee-Won Kim ,  Whan-Kyun Kim ,  Sang-Hwan Park ,  Young-Man Jang

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetoresistive random access memory device includes a free layer, a tunnel barrier layer, an insulation barrier layer, a pinned layer, and a vertical polarizer structure. The tunnel barrier layer and the insulation barrier layer directly contacts different surfaces of the free layer. The pinned layer structure contacts the tunnel barrier layer and includes at least one pinned layer. The vertical polarizer structure contacts the insulation barrier layer and includes a plurality of magnetization multi-layered structures sequentially stacked. Each magnetization multi-layered structure includes a non-magnetic layer and a magnetic layer sequentially stacked. The pinned layer and the magnetic layer have magnetization directions anti-parallel to each other.

公开(公告)号：US09837468B2

公开(公告)日：2017-12-05

申请号：US15202708

申请日：2016-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Seok Kim ,  Kee-Won Kim ,  Whan-Kyun Kim ,  Sang-Hwan Park ,  Young-Man Jang

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive random access memory device includes a free layer, a tunnel barrier layer, an insulation barrier layer, a pinned layer, and a vertical polarizer structure. The tunnel barrier layer and the insulation barrier layer directly contacts different surfaces of the free layer. The pinned layer structure contacts the tunnel barrier layer and includes at least one pinned layer. The vertical polarizer structure contacts the insulation barrier layer and includes a plurality of magnetization multi-layered structures sequentially stacked. Each magnetization multi-layered structure includes a non-magnetic layer and a magnetic layer sequentially stacked. The pinned layer and the magnetic layer have magnetization directions anti-parallel to each other.