公开(公告)号：US20140035051A1

公开(公告)日：2014-02-06

申请号：US14050469

申请日：2013-10-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Chul SUN ,  Dong-Suk SHIN ,  Jung-Deog LEE

IPC: H01L27/088

CPC classification number: H01L27/088 ,  H01L21/76897 ,  H01L29/665 ,  H01L29/6656

Abstract: A semiconductor device and process of fabricating the same, the semiconductor device including a semiconductor substrate, a gate insulating layer on the semiconductor substrate, a gate electrode having sidewalls, on the gate insulating layer, first spacers on the sidewalls of the gate electrode, a source/drain region in the semiconductor substrate, aligned with the sidewalls, a silicide layer on the gate electrode, a silicide layer on the source/drain region, and second spacers covering the first spacers and end parts of a surface of the silicide layer on the source drain region.

Abstract translation: 一种半导体器件及其制造方法，半导体器件包括半导体衬底，半导体衬底上的栅极绝缘层，具有侧壁的栅电极，栅极绝缘层，栅电极的侧壁上的第一间隔物， 源极/漏极区域，与侧壁对准，栅极上的硅化物层，源极/漏极区域上的硅化物层，以及覆盖第一间隔物和硅化物层的表面的端部的第二间隔物， 源极漏极区域。