公开(公告)号：US20170330734A1

公开(公告)日：2017-11-16

申请号：US15384354

申请日：2016-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-soo LEE ,  Je-hun WOO ,  Sang-min JEONG ,  Eung-su KIM ,  Hak-young KIM

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32642 ,  H01J37/3299 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a process chamber providing a space for plasma processing, a lower electrode that is in the process chamber, a surface of the lower electrode being for mounting a wafer thereon, an upper electrode that is in the process chamber and faces the lower electrode, a gas supplier configured to supply process gas between the upper electrode and the lower electrode, a focus ring arranged on the lower electrode to surround an edge of the wafer mounted on the lower electrode, an edge ring arranged below the focus ring and including first bodies that are separate from each other with a space therebetween, a plurality of heaters installed in the first bodies, and a heater controller configured to separately control driving of each of the heaters.

公开(公告)号：US20170125256A1

公开(公告)日：2017-05-04

申请号：US15215152

申请日：2016-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-soo LEE ,  Hong-rae KIM ,  Jeon-il LEE

IPC: H01L21/308 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L21/3081 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/3086 ,  H01L29/6656 ,  H01L29/66795

Abstract: Methods of forming patterns for semiconductor devices are provided. A method may include preparing a substrate including an etch target layer on a surface of the substrate; forming a mask pattern that includes a lower masking layer having a first density and an upper masking layer having a second density that is less than the first density, on the etch target layer; forming spacers that cover sidewalls of the lower masking layer and the upper masking layer; removing the mask pattern; and etching the etch target layer by using the spacers as an etching mask.