公开(公告)号：US20140175458A1

公开(公告)日：2014-06-26

申请号：US13924953

申请日：2013-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joung-real AHN ,  Ha-chul SHIN ,  In-kyung SONG

IPC: H01L21/283 ,  H01L29/43

CPC classification number: H01L29/66742 ,  C01B32/184 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02491 ,  H01L21/02494 ,  H01L21/02527 ,  H01L21/02612 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/78684

Abstract: A method of manufacturing a graphene structure, the graphene structure, and a graphene device including the graphene structure, include depositing a metal layer over a silicon carbide substrate; and performing, at a first temperature, a heat treatment on the silicon carbide substrate over which the metal layer is deposited to form a composite layer and a graphene layer on the silicon carbide substrate. The composite layer includes a metal.

Abstract translation: 制造石墨烯结构的方法，石墨烯结构和包括石墨烯结构的石墨烯装置包括在碳化硅衬底上沉积金属层; 并且在第一温度下对沉积有金属层的碳化硅衬底进行热处理，以在碳化硅衬底上形成复合层和石墨烯层。 复合层包括金属。

公开(公告)号：US20140141265A1

公开(公告)日：2014-05-22

申请号：US14165819

申请日：2014-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeon-jin SHIN ,  Jae-young CHOI ,  Joung-real AHN ,  Jung-tak SEO

IPC: B32B9/04

CPC classification number: B32B9/04 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02378 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/02656 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/778 ,  H01L31/022466 ,  H01L31/1884 ,  H01M4/96 ,  H01M8/0234 ,  H01M8/086 ,  H01M8/1007 ,  H01M8/1011 ,  H01M8/103 ,  H01M8/1041 ,  Y02E10/50 ,  Y02E60/523 ,  Y02P70/56

Abstract: A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.

Abstract translation: 一种直接生长石墨烯层状结构的石墨烯的方法，该方法包括在碳化硅（SiC）薄膜的表面上离子注入氮离子和氧离子的至少一个离子以形成离子注入层 SiC薄膜; 以及利用其中形成的离子注入层对SiC薄膜进行热处理以对存在于离子注入层上的SiC表面层进行石墨化。