公开(公告)号：US09434801B2

公开(公告)日：2016-09-06

申请号：US14017591

申请日：2013-09-04

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE

Inventor： Seung-Tae Choi ,  Young-kwan Lee ,  Ja-Choon Koo ,  Jong-oh Kwon ,  Su-jin Park

IPC: C08F214/22 ,  H01L41/193 ,  B32B15/08 ,  B32B27/08 ,  H01L41/047 ,  B32B27/26 ,  B32B27/28 ,  B32B27/30 ,  B32B27/32

CPC classification number: C08F214/22 ,  B32B15/08 ,  B32B27/08 ,  B32B27/26 ,  B32B27/28 ,  B32B27/304 ,  B32B27/322 ,  B32B2255/10 ,  B32B2255/205 ,  B32B2307/306 ,  B32B2307/308 ,  B32B2307/50 ,  B32B2307/714 ,  B32B2457/00 ,  H01L41/0477 ,  H01L41/193 ,  Y10T428/3154

Abstract: Provided are a polymer and a polymer actuator including the polymer. The polymer is cross-linked by a cross-linking agent. When the polymer is used in the polymer actuator, the polymer actuator shows a high strain and may be stably operated at high temperatures.

公开(公告)号：US09182614B2

公开(公告)日：2015-11-10

申请号：US13725010

申请日：2012-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-chul Cho ,  Sang-hun Lee ,  Yong-hwa Park ,  Chang-young Park ,  Jong-oh Kwon ,  Jang-woo You ,  Hee-sun Yoon

IPC: G02F1/00 ,  H01L31/18 ,  G01C3/08 ,  G02F1/015

CPC classification number: G02F1/00 ,  G01C3/08 ,  G02F1/015 ,  G02F2001/0157 ,  G02F2203/12 ,  H01L31/18

Abstract: A large-area transmissive type optical image modulator, a method of manufacturing the same, and an optical apparatus including the transmissive type optical image modulator are provided. The large-area transmissive type optical image modulator includes: a base substrate; a first expitaxial layer formed on the base substrate; a second expitaxial layer formed on the first expitaxial layer; a first electrode formed on the first expitaxial layer and spaced apart from the second expitaxial layer; a second electrode formed on the second expitaxial layer; and a transparent substrate covering the second expitaxial layer and the second electrode, wherein the base substrate includes a through hole corresponding to a light emitting area, and the first expitaxial layer may include an n-type or p-type doping material.

Abstract translation: 提供了一种大面积透射型光学图像调制器，其制造方法和包括透射型光学图像调制器的光学装置。 大面积透射型光学图像调制器包括：基底; 形成在所述基底基板上的第一外延层; 形成在第一外延层上的第二外延层; 形成在所述第一外延层上并与所述第二外延层隔开的第一电极; 形成在所述第二外延层上的第二电极; 以及覆盖所述第二外延层和所述第二电极的透明基板，其中所述基底基板包括对应于发光区域的通孔，并且所述第一外延层可以包括n型或p型掺杂材料。

公开(公告)号：US09429775B2

公开(公告)日：2016-08-30

申请号：US13947650

申请日：2013-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hun Lee ,  Chang-young Park ,  Jong-oh Kwon ,  Yong-hwa Park

IPC: G02F1/015 ,  G02F1/017 ,  G02F1/21 ,  H01L31/0224 ,  H01L31/0352 ,  B82Y20/00

CPC classification number: G02F1/015 ,  B82Y20/00 ,  G02F1/017 ,  G02F1/01708 ,  G02F1/218 ,  G02F2001/213 ,  G02F2203/11 ,  G02F2203/12 ,  H01L31/0224 ,  H01L31/035236

Abstract: An infrared transmission large-area shutter is provided. The infrared transmission large-area shutter includes a first contact layer on a substrate, a plurality of stacks formed in a two-dimensional (2D) array pattern on a first region of the first contact layer, each stack comprising a lower reflection layer, an active layer, an upper reflection layer, and a second contact layer which are formed sequentially in this order on the first contact layer, a first electrode formed on the first contact layer, a plurality of second electrodes on the second contact layers, a first polymer layer that surrounds sidewalls of the plurality of stacks on the first contact layer, and a second polymer layer, which is transparent to infrared rays, to cover the second electrode on the second contact layer. A through hole corresponding to the plurality of stacks is formed in the substrate.

Abstract translation: 提供红外线传输大面积快门。 红外线传输大面积快门包括在基板上的第一接触层，在第一接触层的第一区域上以二维（2D）阵列图案形成的多个堆叠，每个堆叠包括下反射层， 有源层，上反射层和第二接触层，其依次形成在第一接触层上，形成在第一接触层上的第一电极，第二接触层上的多个第二电极，第一接触层 层，其围绕第一接触层上的多个叠层的侧壁，以及对红外线透明的第二聚合物层，以覆盖第二接触层上的第二电极。 在基板上形成与多个堆叠对应的通孔。