公开(公告)号：US20130238843A1

公开(公告)日：2013-09-12

申请号：US13862817

申请日：2013-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan Ho KIM ,  Dong Kyu YOUN ,  Sang Won HWANG ,  Jin Yub LEE

IPC: G11C8/12 ,  G11C16/08

CPC classification number: G11C8/12 ,  G11C16/0483 ,  G11C16/08

Abstract: A nonvolatile memory device comprises a first mat, a second mat, a third mat, a first address decoder, a second address decoder, and a third address decoder. The first mat comprises first memory blocks, the second mat comprises second memory blocks, and the third mat comprises third memory blocks. The first address decoder selects one of the first memory blocks according to a first even address, the second address decoder selects one of the second memory blocks according to a second even address or a first odd address, and the third address decoder selects one of the third memory blocks according to a second odd address.

Abstract translation: 非易失性存储器件包括第一垫，第二垫，第三垫，第一地址解码器，第二地址解码器和第三地址解码器。 第一垫包括第一存储块，第二垫包括第二存储块，第三块包括第三存储块。 第一地址解码器根据第一偶数地址选择第一存储块之一，第二地址解码器根据第二偶数地址或第一奇数地址选择第二存储块之一，并且第三地址解码器选择 第三存储器块根据第二奇数地址。

公开(公告)号：US20210389369A1

公开(公告)日：2021-12-16

申请号：US17412760

申请日：2021-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Goo LEE ,  Dae Han KIM ,  Ji Yun KIM ,  Jin Yub LEE

IPC: G01R31/28 ,  H01L21/66 ,  G01R31/26

Abstract: Provided are a semiconductor device and a method of operating the same. A semiconductor includes a test circuit which comprises: a test transistor to be tested for time-dependent dielectric breakdown (TDDB) characteristics using a stress voltage; an input switch disposed between a voltage application node to which the stress voltage is applied and an input node which transmits the stress voltage to the test transistor; and a protection switch disposed between the input node and a ground node.