公开(公告)号：US20240431121A1

公开(公告)日：2024-12-26

申请号：US18434014

申请日：2024-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunseok Yang ,  Jaewoo Shin ,  Minhwan An ,  Yunkyeong Jeong ,  Jin Suk Chung

IPC: H10B80/00 ,  H01L25/065 ,  H01L25/18

Abstract: The present disclosure relates to memory devices and memory systems. An example memory device includes a first core die, a second core die, and a base die stacked in a first direction. The base die is configured to output data of memory cells provided by the first and second core dies through a through-via. The through-via passes through the first and second core dies in the first direction with different burst lengths based on a mode signal.