公开(公告)号：US20250060885A1

公开(公告)日：2025-02-20

申请号：US18421352

申请日：2024-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun KANG ,  Garam KIM ,  Jisoo KIM ,  Sangkwon MOON ,  Hyunkyo HO ,  Jin Gu JEONG ,  Youngjun HWANG

IPC: G06F3/06

Abstract: A storage device according to an embodiment includes a memory device configured to apply a first program voltage and a first verification voltage to a first word line and output, based on a program state of each of a plurality of memory cells connected to the first word line, a speed information representing a speed characteristic of each of the plurality of memory cells; and a memory controller configured to determine at least one memory cell to be programmed into a predetermined program state; determine, among the at least one memory cell, at least one target memory cell having a first speed characteristic based on the speed information; and perform a state-shaping operation to convert a data corresponding to the predetermined program state for the at least one target memory cell into a value corresponding to a program state different from the predetermined program state.