公开(公告)号：US20240274762A1

公开(公告)日：2024-08-15

申请号：US18433643

申请日：2024-02-06

Applicant: Samsung Electronics Co., Ltd

Inventor： Jihoon YUN ,  Daesup Kim ,  Sungmok Hong ,  Jungsung Kim ,  Mihwa Yu

IPC: H01L33/54 ,  H01L33/48

CPC classification number: H01L33/54 ,  H01L33/483

Abstract: A light emitting diode (LED) package includes a body including a body molding layer having an opening, and a metal plate surrounded by the body molding layer, an upper surface of the metal plate being exposed through the opening of the body molding layer; an LED chip on the upper surface of the metal plate exposed through the opening of the body molding layer; and a lens molding layer, the lens molding layer including a lens portion on the LED chip and a peripheral portion on the body molding layer, wherein the body molding layer includes a plurality of recess regions adjacent to the opening of the body molding layer and extending outwardly in a radial direction of the opening of the body molding layer, and the peripheral portion fills the plurality of recess regions.

公开(公告)号：US20220231082A1

公开(公告)日：2022-07-21

申请号：US17716492

申请日：2022-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihye YEON ,  Hanul YOO ,  Jihoon YUN ,  Suhyun JO

IPC: H01L27/15 ,  H01L33/50 ,  H01L33/32 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L25/18 ,  H01L27/12 ,  H01L23/00 ,  H01L33/00

Abstract: An LED module includes light emission windows; LED cells corresponding to the light emission windows, the LED cells each including a lower and upper light emitting structure, the lower light emitting structure having an upper surface with first and second regions and having a first conductivity-type semiconductor layer, the upper light emitting structure being on the first region of the lower light emitting structure and having a second conductivity-type semiconductor layer, the LED cells including an active layer between the first and second conductivity-type semiconductor layers; a protective insulating film on a side surface of the lower light emitting structure and on the second region; a light blocking film on the protective insulating film, between the LED cells; a gap-fill insulating film on the protective insulating film between the LED cells and contacting a side surface of the upper light emitting structure; a first electrode; and a second electrode.

公开(公告)号：US20210167248A1

公开(公告)日：2021-06-03

申请号：US15932000

申请日：2020-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongin YANG ,  Hankyu SEONG ,  Sunghyun SIM ,  Jihye YEON ,  Hanul YOO ,  Jihoon YUN

IPC: H01L33/24 ,  H01L33/50 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L27/15

Abstract: A semiconductor light emitting device including at least one light emitting structure on a substrate, the at least one light emitting structure including a first semiconductor pattern, an active pattern, and a second semiconductor pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the substrate; a first electrode contacting a substrate-facing surface of the first semiconductor pattern; and a second electrode at least partially surrounding and contacting a sidewall of the second semiconductor pattern.

公开(公告)号：US20210126045A1

公开(公告)日：2021-04-29

申请号：US16901451

申请日：2020-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihye YEON ,  Hanul YOO ,  Jihoon YUN ,  Suhyun JO

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/50 ,  H01L33/32 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L25/18 ,  H01L27/12 ,  H01L23/00

Abstract: An LED module includes light emission windows; LED cells corresponding to the light emission windows, the LED cells each including a lower and upper light emitting structure, the lower light emitting structure having an upper surface with first and second regions and having a first conductivity-type semiconductor layer, the upper light emitting structure being on the first region of the lower light emitting structure and having a second conductivity-type semiconductor layer, the LED cells including an active layer between the first and second conductivity-type semiconductor layers; a protective insulating film on a side surface of the lower light emitting structure and on the second region; a light blocking film on the protective insulating film, between the LED cells; a gap-fill insulating film on the protective insulating film between the LED cells and contacting a side surface of the upper light emitting structure; a first electrode; and a second electrode.