公开(公告)号：US20240090202A1

公开(公告)日：2024-03-14

申请号：US18243731

申请日：2023-09-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon CHANG ,  Jaejoon SONG ,  Heonjun HA ,  Jongmoo LEE

IPC: H10B12/00 ,  H01L23/522

CPC classification number: H10B12/482 ,  H01L23/5225 ,  H10B12/02 ,  H10B12/315 ,  H10B12/50

Abstract: A semiconductor device includes a lower structure, an interlayer insulating layer on the lower structure, a conductive shielding line on the lower structure and penetrating through the interlayer insulating layer, a capping insulating layer on the interlayer insulating layer and the conductive shielding line, and a bit line on the lower structure and penetrating through the capping insulating layer and the interlayer insulating layer. An upper surface of the bit line is at a higher level than an upper surface of the conductive shielding line. A lower surface of the bit line is at a level equal to or lower than a level of a lower surface of the conductive shielding line.