公开(公告)号：US20250126860A1

公开(公告)日：2025-04-17

申请号：US18738594

申请日：2024-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehyun AHN ,  Jinkyu KIM ,  Hidenobu FUKUTOME ,  Jeewoong KIM ,  Yunsuk NAM

IPC: H01L29/08 ,  H01L23/528 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: An integrated circuit device includes: a substrate including a first surface and a second surface; a fin-type active area extending on the first surface of the substrate in a first horizontal direction, and including a first area and a second area that are adjacent to each other; a first source/drain area arranged on the first area of the fin-type active area; a second source/drain area arranged on the second area of the fin-type active area; and a first filling insulating layer extending between the first source/drain area and the second source/drain area, wherein the first area includes a first conductivity type, wherein the second area includes a second conductivity type that is different from the first conductivity type, and wherein a boundary between the first area and the second area includes a portion that is substantially perpendicular to the first horizontal direction, and overlaps the filling insulating layer.