公开(公告)号：US11974433B2

公开(公告)日：2024-04-30

申请号：US17575947

申请日：2022-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joo-Heon Kang ,  Tae Hun Kim ,  Jae Ryong Sim ,  Kwang Young Jung ,  Gi Yong Chung ,  Jee Hoon Han ,  Doo Hee Hwang

IPC: H10B43/27 ,  H10B43/35

CPC classification number: H10B43/27 ,  H10B43/35

Abstract: A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.

公开(公告)号：US20220037316A1

公开(公告)日：2022-02-03

申请号：US17334589

申请日：2021-05-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNG YOON KIM ,  Jae Ryong Sim ,  Jee Hoon Han

IPC: H01L27/088 ,  H01L29/417 ,  H01L21/8234

Abstract: A semiconductor device includes an active region that extends in a first direction and has a first width in a second direction that intersects the first direction, a first gate structure disposed on the active region that has a second width in the first direction and extends in the second direction, a first metal contact spaced apart from the first gate structure in the first direction, a first trench formed in the active region, and an insulating material that fills the first trench and forms a first active cut, wherein the first active cut defines a first metal region in the active region in which the first metal contact is located, and the first metal contact is placed off-center inside the first metal region and a length of a region where the first gate structure and the active region overlap is greater than that of the first and second trenches.

公开(公告)号：US11227870B2

公开(公告)日：2022-01-18

申请号：US16739392

申请日：2020-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joo-Heon Kang ,  Tae Hun Kim ,  Jae Ryong Sim ,  Kwang Young Jung ,  Gi Yong Chung ,  Jee Hoon Han ,  Doo Hee Hwang

IPC: H01L27/11578 ,  H01L27/11582 ,  H01L27/1157

Abstract: A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.