公开(公告)号：US20160380084A1

公开(公告)日：2016-12-29

申请号：US15234484

申请日：2016-08-11

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： JONG-HYUK KIM ,  Kang-Ill Seo ,  Hyun-Jae Kang ,  Deok-Han Bae

IPC分类号： H01L29/66 ,  H01L21/311 ,  H01L21/308

CPC分类号： H01L29/66795 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

摘要： A method of fabricating a semiconductor device is provided. A plurality of target patterns is formed on a substrate. The plurality of target patterns is extended in parallel to each other along a first direction. A first mask pattern extending in the first direction and including a plurality of first openings is formed. A second mask pattern extending in a second direction crossing the first direction and including a plurality of second openings is formed. Each second opening overlaps each first opening to form an overlapped opening region. A region of the plurality of target patterns is etched through the overlapped opening region using the first mask pattern and the second mask pattern as a etch mask. The region of the plurality of target patterns is overlapped with the overlapped opening region.