公开(公告)号：US20220139483A1

公开(公告)日：2022-05-05

申请号：US17336378

申请日：2021-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUNHYANG PARK ,  JINYOUNG KIM ,  JISANG LEE ,  SEHWAN PARK ,  ILHAN PARK

IPC: G11C29/42 ,  G11C29/44 ,  G11C16/26 ,  G11C16/04 ,  G11C16/34

Abstract: A reading method for a non-volatile memory device, includes performing a normal read operation using a default read level in response to a first read command; and performing a read operation using a multiple on-chip valley search (OVS) sensing operation in response to a second read command, when read data read in the normal read operation are uncorrectable.

公开(公告)号：US20220115073A1

公开(公告)日：2022-04-14

申请号：US17341837

申请日：2021-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNGMIN PARK ,  KYUNGHOON SUNG ,  ILHAN PARK ,  JISANG LEE ,  JOON SUC JANG ,  SANGHYUN JOO

IPC: G11C16/24 ,  G11C16/04 ,  G11C16/10 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00

Abstract: A nonvolatile memory device includes cell strings commonly connected between bitlines and a source line where the cell strings are grouped into memory blocks. During a precharge period, channels of the cell strings of a selected memory block are precharged by applying a gate induced drain leakage (GIDL) on voltage to gates of GIDL transistors included in the cell strings of the selected memory block where the GIDL on voltage has a voltage level to induce GIDL. During the precharge period, precharge of channels of the cell strings of an unselected memory block are prevented by controlling a gate voltage of GIDL transistors included in the cell strings of the unselected memory block to prevent the GIDL. During a program execution period after the precharge period, memory cells of the selected memory block connected to a selected wordline are programmed by applying a program voltage to the selected wordline.