公开(公告)号：US11289334B2

公开(公告)日：2022-03-29

申请号：US16551930

申请日：2019-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-A Lee ,  Yeonsook Kim ,  Inji Lee

IPC: H01L29/167 ,  H01L21/02 ,  H01L21/225 ,  H01L21/306 ,  H01L21/324 ,  H01L21/322 ,  H01L27/146

Abstract: An epitaxial wafer and a method of fabricating an epitaxial wafer, the method including providing a semiconductor substrate doped with both boron and germanium such that a sum of boron concentration and germanium concentration is at least 8.5E+18 atoms/cm3 and the germanium concentration is 6 times or less the boron concentration; forming an epitaxial layer on the semiconductor substrate such that the semiconductor substrate and the epitaxial layer constitute the epitaxial wafer; and annealing the epitaxial wafer for 1 hour or longer at a temperature of 1,000° C. or less.