公开(公告)号：US20230187352A1

公开(公告)日：2023-06-15

申请号：US17896241

申请日：2022-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Inho ROH ,  Donghwa KWAK ,  Kyung Don MUN ,  Wonsok LEE

IPC: H01L23/528 ,  H01L27/108 ,  H01L23/522

CPC classification number: H01L23/5283 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10891 ,  H01L23/5226

Abstract: A semiconductor memory device includes a substrate including active regions, the active regions having first impurity regions and second impurity regions, word lines on a first surface of the substrate, the word lines extending in a first direction, first bit lines on the word lines, the first bit lines extending in a second direction crossing the first direction, and the first bit lines being connected to the first impurity regions, first contact plugs between the first bit lines, the first contact plugs being connected to the second impurity regions, respectively, second bit lines on a second surface of the substrate, the second bit lines being electrically connected to the first impurity regions, and a first capacitor on the first contact plugs.