Halftone Phase Shift Blank Photomasks and Halftone Phase Shift Photomasks
    1.
    发明申请
    Halftone Phase Shift Blank Photomasks and Halftone Phase Shift Photomasks 有权
    半色调相移空白光掩模和半色调相移光掩模

    公开(公告)号:US20130101926A1

    公开(公告)日:2013-04-25

    申请号:US13706978

    申请日:2012-12-06

    IPC分类号: G03F1/26

    CPC分类号: G03F1/26 G03F1/32

    摘要: Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.

    摘要翻译: 提供了半色调相移光掩模,其包括被配置为透射光的基板; 基板上的移动图案,包括基板的中心部分上的图案区域和设置在基板的周边上的盲区的移动图案,盲区的移位图案的厚度大于基板的厚度 图案区域,并且被配置为部分地透射光; 以及遮光图案,其形成在所述遮光区域中的所述移动图案上,并且被构造成屏蔽所述光。 本文还提供了相关方法。

    Halftone phase shift blank photomasks and halftone phase shift photomasks
    2.
    发明授权
    Halftone phase shift blank photomasks and halftone phase shift photomasks 有权
    半色调相移空白光掩模和半色调相移光掩模

    公开(公告)号:US08865375B2

    公开(公告)日:2014-10-21

    申请号:US13706978

    申请日:2012-12-06

    IPC分类号: G03F1/26 G03F1/32

    CPC分类号: G03F1/26 G03F1/32

    摘要: Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.

    摘要翻译: 提供了半色调相移光掩模,其包括被配置为透射光的基板; 基板上的移动图案,包括基板的中心部分上的图案区域和设置在基板的周边上的盲区的移动图案,盲区的移位图案的厚度大于基板的厚度 图案区域,并且被配置为部分地透射光; 以及遮光图案,其形成在所述遮光区域中的所述移动图案上,并且被构造成屏蔽所述光。 本文还提供了相关方法。

    Mask inspection apparatuses and methods, and methods of fabricating masks including mask inspection methods

    公开(公告)号:US11353413B2

    公开(公告)日:2022-06-07

    申请号:US17181012

    申请日:2021-02-22

    摘要: Mask inspection apparatuses and/or mask inspection methods are provided that enable quick and accurate inspection of a registration of a pattern on a mask while a defect of the mask and the registration of the pattern are inspected simultaneously. The mask inspection apparatus may include a stage configured to receive a mask for inspection; an e-beam array including a plurality of e-beam irradiators configured to irradiate e-beams to the mask and detectors configured to detect electrons emitted from the mask; and a processor configured to process signals from the detectors. A defect of the mask may be detected through processing of the signal and registrations of patterns on the mask may be inspected based on positional information regarding the e-beam irradiators.

    Mask inspection apparatuses and methods, and methods of fabricating masks including mask inspection methods

    公开(公告)号:US10955369B2

    公开(公告)日:2021-03-23

    申请号:US16437468

    申请日:2019-06-11

    摘要: Mask inspection apparatuses and/or mask inspection methods are provided that enable quick and accurate inspection of a registration of a pattern on a mask while a defect of the mask and the registration of the pattern are inspected simultaneously. The mask inspection apparatus may include a stage configured to receive a mask for inspection; an e-beam array including a plurality of e-beam irradiators configured to irradiate e-beams to the mask and detectors configured to detect electrons emitted from the mask; and a processor configured to process signals from the detectors. A defect of the mask may be detected through processing of the signal and registrations of patterns on the mask may be inspected based on positional information regarding the e-beam irradiators.

    MASK INSPECTION APPARATUSES AND METHODS, AND METHODS OF FABRICATING MASKS INCLUDING MASK INSPECTION METHODS

    公开(公告)号:US20200150062A1

    公开(公告)日:2020-05-14

    申请号:US16437468

    申请日:2019-06-11

    摘要: Mask inspection apparatuses and/or mask inspection methods are provided that enable quick and accurate inspection of a registration of a pattern on a mask while a defect of the mask and the registration of the pattern are inspected simultaneously. The mask inspection apparatus may include a stage configured to receive a mask for inspection; an e-beam array including a plurality of e-beam irradiators configured to irradiate e-beams to the mask and detectors configured to detect electrons emitted from the mask; and a processor configured to process signals from the detectors. A defect of the mask may be detected through processing of the signal and registrations of patterns on the mask may be inspected based on positional information regarding the e-beam irradiators.