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1.发明申请公开(公告)号：US20130101926A1
公开(公告)日：2013-04-25
申请号：US13706978
申请日：2012-12-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Il-Yong Jang , Hoon Kim , Hye-Kyoung Lee , Sang-Gyun Woo , Dong-Seok Nam
IPC: G03F1/26
Abstract: Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.
Abstract translation: 提供了半色调相移光掩模，其包括被配置为透射光的基板; 基板上的移动图案，包括基板的中心部分上的图案区域和设置在基板的周边上的盲区的移动图案，盲区的移位图案的厚度大于基板的厚度 图案区域，并且被配置为部分地透射光; 以及遮光图案，其形成在所述遮光区域中的所述移动图案上，并且被构造成屏蔽所述光。 本文还提供了相关方法。
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2.发明授权公开(公告)号：US08865375B2
公开(公告)日：2014-10-21
申请号：US13706978
申请日：2012-12-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Il-Yong Jang , Hoon Kim , Hye-Kyoung Lee , Sang-Gyun Woo , Dong-Seok Nam
Abstract: Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.
Abstract translation: 提供了半色调相移光掩模，其包括被配置为透射光的基板; 基板上的移动图案，包括基板的中心部分上的图案区域和设置在基板的周边上的盲区的移动图案，盲区的移位图案的厚度大于基板的厚度 图案区域，并且被配置为部分地透射光; 以及遮光图案，其形成在所述遮光区域中的所述移动图案上，并且被构造成屏蔽所述光。 本文还提供了相关方法。
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