公开(公告)号：US11735522B2

公开(公告)日：2023-08-22

申请号：US17224906

申请日：2021-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyoseok Woo ,  Hyunsook Yoon ,  Jaeeun Lee ,  Junseok Kim

IPC: H01L23/528 ,  H01L23/522

CPC classification number: H01L23/528 ,  H01L23/5226

Abstract: A semiconductor device includes a first metal wiring pattern area, and a second metal wiring pattern area that does not overlap the first metal wiring pattern area in a plan view. The first metal wiring pattern area includes a first pattern, the second metal wiring pattern area includes a second pattern that is spaced apart from the first pattern and includes one or more lines. The first metal wiring pattern area includes an assist pattern comprising one or more lines. The assist pattern is spaced apart from the second pattern, parallel with the second pattern, and is between the first pattern and the second pattern. One end of the assist pattern is connected to the first pattern.