公开(公告)号：US20240321979A1

公开(公告)日：2024-09-26

申请号：US18544560

申请日：2023-12-19

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Davin LEE ,  Hyunseung SONG

IPC分类号： H01L29/417 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/41733 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

摘要： An integrated circuit device includes: a substrate including a first and second device regions; a first and third fin-type active regions extending in a first direction in the first device region; a second and fourth fin-type active regions extending in the first direction in the second device region; a gate line extending in a second direction crossing the first direction in the first through fourth fin-type active regions; a first source/drain region adjacent to the gate line in the first fin-type active region; a second source/drain region adjacent to the gate line in the second fin-type active region; a first source/drain contact connected to the first source/drain region; and a second source/drain contact connected to the second source/drain region; wherein the first source/drain contact includes a first short metal plug and a first conductive barrier layer at least partially surrounding a portion of sidewalls of the first short metal plug.