公开(公告)号：US20250105193A1

公开(公告)日：2025-03-27

申请号：US18890118

申请日：2024-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungmin Ko ,  Hyunhee Lee ,  Hojun Lee ,  Dongjoo Choi

IPC: H01L23/00 ,  H01L23/498 ,  H01L25/065 ,  H10B80/00

Abstract: A semiconductor package includes a first semiconductor chip including a first through-via and a first upper pad, a second semiconductor chip provided on the first semiconductor chip and including a second lower pad, and a bonding bump provided between the first semiconductor chip and the second semiconductor chip and connected to the first upper pad and the second lower pad. The bonding bump includes: a conductive pattern directly contacting the second lower pad and including nickel and a bonding structure directly contacting the conductive pattern and the first upper pad, wherein the bonding structure includes an intermetallic compound including copper and a solder material. A thickness of the bonding structure is from about 47% to about 54% of a sum of a thickness of the conductive pattern, a thickness of the bonding structure, and a thickness of the first upper pad.