公开(公告)号：US20240304637A1

公开(公告)日：2024-09-12

申请号：US18594964

申请日：2024-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Yool CHOI ,  Seung Hun Han ,  Cheolmin Park ,  Hyeok Jun Jin

IPC: H01L27/146

CPC classification number: H01L27/1461 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14696

Abstract: An image sensor includes: a semiconductor substrate including a top surface and a bottom surface; a two-dimensional (2D) material layer on the top surface of the semiconductor substrate and including molybdenum disulfide (MoS2); and a top absorber on a top surface of the 2D material layer and including graphene, wherein the semiconductor substrate includes silicon doped with a p-type impurity, the 2D material layer has n-type conductivity, and the semiconductor substrate and the 2D material layer are configured to form a p-n diode.