公开(公告)号：US20150294873A1

公开(公告)日：2015-10-15

申请号：US14636257

申请日：2015-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Huyong LEE ,  Jae-Jung KIM ,  Wandon KIM ,  Sangjin HYUN

IPC: H01L21/28 ,  H01L29/423 ,  H01L29/49 ,  H01L21/283

CPC classification number: H01L27/11521 ,  H01L29/40114 ,  H01L29/42336 ,  H01L29/66795 ,  H01L29/66825 ,  H01L29/785

Abstract: Provided is a method of fabricating a semiconductor device, including forming an interlayered insulating layer having an opening, on a substrate; sequentially forming a first conductive pattern, a barrier pattern, and a second conductive pattern on bottom and side surfaces of the opening; and nitrifying an upper portion of the second conductive pattern to form a metal nitride layer that is spaced apart from the first conductive pattern.

Abstract translation: 提供一种制造半导体器件的方法，包括在衬底上形成具有开口的层间绝缘层; 在开口的底部和侧表面上依次形成第一导电图案，阻挡图案和第二导电图案; 并且硝化第二导电图案的上部以形成与第一导电图案间隔开的金属氮化物层。