Nonvolatile memory device
    1.
    发明授权

    公开(公告)号:US10446575B2

    公开(公告)日:2019-10-15

    申请号:US16014902

    申请日:2018-06-21

    Abstract: A three-dimensional (3D) nonvolatile memory includes a stacked structure that includes a plurality of conductive layers that alternate with and are spaced apart from each other by a plurality of interlayer insulating layers. The stacked structure includes a first cell region, a second cell region spaced apart from the first cell region, and a connection region between the first cell region and the second cell region. The connection region includes a first step portion that contacts the first cell region and has a stepped shape that descends in a direction approaching the second cell region, a second step portion that contacts the second cell region and has a stepped shape that descends in a direction approaching the first cell region, and a connection portion that connects the first cell region and the second cell region.

    NONVOLATILE MEMORY DEVICE
    2.
    发明申请

    公开(公告)号:US20190139978A1

    公开(公告)日:2019-05-09

    申请号:US16014902

    申请日:2018-06-21

    Abstract: A three-dimensional (3D) nonvolatile memory includes a stacked structure that includes a plurality of conductive layers that alternate with and are spaced apart from each other by a plurality of interlayer insulating layers. The stacked structure includes a first cell region, a second cell region spaced apart from the first cell region, and a connection region between the first cell region and the second cell region. The connection region includes a first step portion that contacts the first cell region and has a stepped shape that descends in a direction approaching the second cell region, a second step portion that contacts the second cell region and has a stepped shape that descends in a direction approaching the first cell region, and a connection portion that connects the first cell region and the second cell region.

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