公开(公告)号：US20250048650A1

公开(公告)日：2025-02-06

申请号：US18653139

申请日：2024-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seulji SONG ,  Youngmin KO ,  Hodae KIM

IPC: H10B63/00

Abstract: A semiconductor device includes first and second conductive lines respectively extending in first and second directions on a substrate. Cell structures are respectively between the first and second conductive lines and include first and second electrodes and a selector layer. First capping layers cover side surfaces of the first conductive lines and first side surfaces of the cell structures in the second direction. First interlayer insulating layers fill spaces between the first conductive lines and between the cell structures in the second direction and contact the first capping layers. Second capping layers cover second side surfaces of the cell structures in the first direction and side surfaces of the second conductive lines. Second interlayer insulating layers fill spaces between the cell structures and between the second conductive lines in the first direction and contact the second capping layers. The first and second interlayer insulating layers have different carbon contents.