公开(公告)号：US10311946B2

公开(公告)日：2019-06-04

申请号：US15221875

申请日：2016-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-Wool Jeong ,  Woo-Jin Rim ,  Tae-Joong Song ,  Seong-Ook Jung ,  Gyu-Hong Kim

IPC: G11C7/18 ,  G11C11/419 ,  G11C11/4091

Abstract: The semiconductor memory device includes: a memory cell; a sensing circuit connected to the memory cell via a first bit line and a second bit line different from the first bit line, the sensing circuit configured to sense data stored in the memory cell; and a bit line voltage control circuit connected to the memory cell via the first bit line and the second bit line, the bit line voltage control circuit configured to precharge the first bit line to a first voltage that is lower than a supply voltage and to precharge the second bit line to a second voltage that is lower than the supply voltage and is different from the first voltage.