公开(公告)号：US20240003007A1

公开(公告)日：2024-01-04

申请号：US18138192

申请日：2023-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： PYUNG MOON ,  KIHYUN KIM ,  HYOUNGSUB KIM ,  HOIJOON KIM ,  GEUNYOUNG YEOM ,  KONGSOO LEE ,  HEESOO LEE

IPC: C23C16/455 ,  H01J37/32 ,  H01L29/16 ,  H01L29/51

CPC classification number: C23C16/45536 ,  H01L29/517 ,  H01L29/1606 ,  H01J37/32357

Abstract: A method of manufacturing an integrated circuit device includes alternately stacking sacrificial semiconductor layers and channel layers on a substrate to form a stack structure, forming source regions and drain regions on both sides of the stack structure, forming a gate space between the channel layers by removing the sacrificial semiconductor layers, forming the channel layers to be spaced apart from each other in a perpendicular direction to the substrate, performing a plasma treatment of boron trichloride (BCL3) on the channel layers, forming gate dielectric layers on the channel layers on which the plasma treatment of boron trichloride (BCL3) is performed, and forming gate layers covering the gate dielectric layers in the gate space.

公开(公告)号：US20250149314A1

公开(公告)日：2025-05-08

申请号：US18931884

申请日：2024-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mukyeong KIM ,  Hyun Seok KIM ,  SEJIN PARK ,  HONG JAE KANG ,  DAE-HOON LEE ,  JEONGAN CHOI ,  KWAN-TAE KIM ,  YOU-NA KIM ,  HOHYUN SONG ,  HEESOO LEE ,  YOUNGHOON SONG ,  Iljeong HEO

IPC: H01J37/32

Abstract: A scrubber may include a plasma processing unit including a plasma generating device and a power generating device, a combustion processing unit including a combustor, which is used to form a flame, a connection conduit connected to the plasma processing unit and spaced apart from the combustion processing unit, and a back-end processing unit connected to the combustion processing unit. The connection conduit may be used to supply a waste gas to the plasma generating device, and the plasma generating device may be configured to form plasma using the waste gas. The plasma and combustion processing units may be configured to provide a first reaction space, in which the plasma is formed, and a second reaction space, in which the flame is formed.